EUCLID TECHLABS Thick Film Ceramic/Dielectric Sputtering Metallization Technology

Euclid has developed a sputtering system, initially for depositing copper skins on dielectric wakefield structures, but also potentially useful for a variety of metallization and dielectric deposition applications. The system's capabilities include:

  • The ability to rapidly grow metal films of up to ~10 μm thickness (important for GHz and THz applications where the effects of the skin depth need to be considered), and
  • smooth ultrathin (~10 nm) films;
  • metallizing substrates of arbitrary shape, including ~1 mm diameter tubes for dielectric loaded accelerator applications.
  • Besides metallization, the system can be driven by an RF power source and used to deposit dielectric materials such as Al2O3.

Sketch showing the main principles of (dc) magnetron sputtering deposition. The inset shows the glow from the dc plasma: the brightest area is the actual location where sputtering takes place and where the target material is being deposited onto a substrate.

Sputtering of copper and titanium on tubular quartz wakefield structures

The sputtering system developed by Euclid. Base pressure is 10-7 Torr. Sputtering is performed using argon at 10-4 to 10-3 Torr to provide the highest sputtering rate.
Another shot of the sputtering system.
Copper (left) and titanium (right) targets used for metallization of dielectric structures. Ti is useful for high quality adhesion (typically 100 nm thickness), and Cu is used as a finish layer (up to 10 μm in thickness).
~1 mm diameter quartz tubes and support fixture prior to metallization.
Plasma glow from inside the reactor as Cu deposition is completed on the quartz tubes.
Quartz tubes after Ti/Cu multilayer deposition.
Quartz tubes prior to trimming. Black marks are places where the tubes were attached in the support fixture.
Finished tubes trimmed to customer specs.
SEM image of one of the quartz tubes. (ID/OD = 670/870 μm)
SEM measurement of the total metallization thickness (2 μm) after Ti deposition cycle + Cu deposition cycle.